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IQEH50NE2LM7UCGSCATMA1

Name: Infineon IQEH50NE2LM7UCGSCATMA1
Brand: Infineon Technologies
SKU: 726-IQEH50NE2LM7UCGS
Price: 58340 IDR
Availability: InStock

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Mouser No:

726-IQEH50NE2LM7UCGS

Mfr. No:

IQEH50NE2LM7UCGSCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power -Transistor, 25 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IQEH50NE2LM7UCGSCATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IQEH50NE2LM7UCGSCATMA1

In Stock: 4.756

Stock:: 4.756 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp58.340	Rp58.340
	Rp37.976	Rp379.760
	Rp28.987	Rp2.898.700
	Rp24.217	Rp12.108.500
	Rp20.731	Rp20.731.000
	Rp19.814	Rp49.535.000
Full Reel (Order in multiples of 6000)
	Rp18.346	Rp110.076.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	298 A
Rds On - Drain-Source Resistance:	500 uOhms
Vgs - Gate-Source Voltage:	16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	27 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.4 ns
Forward Transconductance - Min:	110 S
Product Type:	MOSFETs
Rise Time:	2 ns
Series:	OptiMOS 7
Factory Pack Quantity:	6000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	IQEH50NE2LM7UCGSC SP006055383

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Datasheet

IQEH50NE2LM7UCGSCATMA1 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.