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IQEH68NE2LM7UCGATMA1

Name: Infineon IQEH68NE2LM7UCGATMA1
Brand: Infineon Technologies
SKU: 726-IQEH68NE2LM7UCGA
Price: 50635 IDR
Availability: InStock

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Mouser No:

726-IQEH68NE2LM7UCGA

Mfr. No:

IQEH68NE2LM7UCGATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power -Transistor, 25 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IQEH68NE2LM7UCGATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IQEH68NE2LM7UCGATMA1

In Stock: 3.992

Stock:: 3.992 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp50.635	Rp50.635
	Rp32.656	Rp326.560
	Rp23.299	Rp2.329.900
	Rp19.447	Rp9.723.500
	Rp16.805	Rp16.805.000
	Rp15.961	Rp39.902.500
Full Reel (Order in multiples of 5000)
	Rp14.860	Rp74.300.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	338 A
Rds On - Drain-Source Resistance:	680 uOhms
Vgs - Gate-Source Voltage:	16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5.1 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	7.7 ns
Part # Aliases:	IQEH68NE2LM7UCG SP005960141

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Datasheet

IQEH68NE2LM7UCGATMA1 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.