IS66WVC2M16ECLL-7010BLI

ISSI
870-WVC2M16EL7010BLI
IS66WVC2M16ECLL-7010BLI

Mfr.:

Description:
SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS

Datasheet:
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Learn more about ISSI IS66WVC2M16ECLL-7010BLI

In Stock: 480

Stock:
480 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 200
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp104.939 Rp104.939
Rp97.784 Rp977.840

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
Brand: ISSI
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WVC2M16EALL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

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CNHTS:
8542320000
CAHTS:
8542320030
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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