IXSH65N120L2KHV

IXYS
747-IXSH65N120L2KHV
IXSH65N120L2KHV

Mfr.:

Description:
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 100

Stock:
100
Can Dispatch Immediately
On Order:
450
Expected 02/06/2026
Factory Lead Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp183.827 Rp183.827
Rp139.430 Rp1.394.300
Rp116.130 Rp11.613.000
Full Reel (Order in multiples of 450)
Rp103.471 Rp46.561.950
Rp92.280 Rp83.052.000

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
65 A
52 mOhms
- 5 V, + 20 V
4.5 V
110 nC
- 55 C
+ 175 C
375 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 10.5 ns
Packaging: Reel
Packaging: Cut Tape
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 22.1 ns
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19.3 ns
Typical Turn-On Delay Time: 9.6 ns
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Attributes selected: 0

Datasheet

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IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

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