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IXXH50N60C3

Name: IXYS IXXH50N60C3
Brand: IXYS
SKU: 747-IXXH50N60C3
Price: 77604 IDR
Availability: OutOfStock

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Mouser No:

747-IXXH50N60C3

Mfr. No:

IXXH50N60C3

Mfr.:

IXYS

Description:

IGBTs XPT IGBT C3-Class 600V/100 Amp

Datasheet:

IXXH50N60C3 Datasheet

ECAD Model:

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Learn more about IXYS IXXH50N60C3

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 300 Multiples: 30

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp77.604	Rp23.281.200
	Rp76.870	Rp39.203.700

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD
Mounting Style:	Through Hole
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.3 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	600 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXXH50N60
Packaging:	Tube
Brand:	IXYS
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT
Unit Weight:	6,500 g

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Datasheet

IXXH50N60C3 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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