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IXYH90N65A5

Name: IXYS IXYH90N65A5
Brand: IXYS
SKU: 747-IXYH90N65A5
Price: 183093 IDR
Availability: InStock

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Mouser No:

747-IXYH90N65A5

Mfr. No:

IXYH90N65A5

Mfr.:

IXYS

Description:

IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247

Datasheet:

IXYH90N65A5 Datasheet (PDF)

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In Stock: 135

Stock:: 135 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp183.093	Rp183.093
	Rp138.696	Rp1.386.960
	Rp115.580	Rp13.869.600
	Rp103.105	Rp52.583.550
	Rp91.730	Rp93.564.600

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	220 A
Pd - Power Dissipation:	650 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	220 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXYH90N65A5 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

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DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

650V XPT™ High Speed Trench IGBTs

IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

XPT™ GenX5™ Trench IGBTs

IXYS XPT™ GenX5™ Trench IGBTs are developed using proprietary XPT thin-wafer technology and state-of-the-art 5th generation (GenX5) Trench IGBT process. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The XPT GenX5 Trench IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and a 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. These IGBTs also include a positive collector-to-emitter voltage temperature coefficient, enabling designers to use multiple devices in parallel to meet high current requirements. The low gate charge of these devices helps reduce gate drive requirements and switching losses.