KTDM4G3C818BGCEAT

SMARTsemi
473-M4G3C818BGCEAT
KTDM4G3C818BGCEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 4GB 512MX8 1866Mbps 1.35V/1.5V 78-FBGA Commercial

Datasheet:
ECAD Model:
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Learn more about SMARTsemi KTDM4G3C818BGCEAT

In Stock: 210

Stock:
210 Can Dispatch Immediately
Quantities greater than 210 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp197.220 Rp197.220
Rp183.277 Rp1.832.770
Rp177.589 Rp4.439.725
Rp173.370 Rp8.668.500
Rp169.150 Rp16.915.000
Rp163.463 Rp34.327.230
Rp159.427 Rp66.959.340
Rp158.143 Rp166.050.150

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
8 bit
933 MHz
FBGA-78
512 M x 8
1.283 V
1.575 V
0 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

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