MAPC-A3005-ADTR1

MACOM
937-MAPC-A3005-ADTR1
MAPC-A3005-ADTR1

Mfr.:

Description:
GaN FETs Transistor, DC - 6 GHz, 8W, G28V5-1C

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 188

Stock:
188 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp2.051.817 Rp2.051.817
Rp1.723.607 Rp17.236.070
Rp1.553.356 Rp155.335.600
Full Reel (Order in multiples of 1000)
Rp1.553.356 Rp1.553.356.000

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
SMD/SMT
PDFN-12
1 Channel
84 V
1.4 A
- 10 V, + 2 V
- 40 C
+ 85 C
8 W
Brand: MACOM
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Gain: 19 dB
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: DC
Moisture Sensitive: Yes
Output Power: 39.9 dBm
Packaging: Reel
Packaging: Cut Tape
Product: GaN FETs
Product Type: GaN FETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: GaN, SiC
Type: SiC Transistor
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Attributes selected: 0

Datasheet

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USHTS:
8541290055
ECCN:
EAR99

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.

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