MASTERGAN1LTR

STMicroelectronics
511-MASTERGAN1LTR
MASTERGAN1LTR

Mfr.:

Description:
Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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Datasheet:
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In Stock: 1.274

Stock:
1.274 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp130.990 Rp130.990
Rp101.086 Rp1.010.860
Rp93.748 Rp2.343.700
Rp85.492 Rp8.549.200
Rp81.456 Rp20.364.000
Rp79.071 Rp39.535.500
Rp77.237 Rp77.237.000
Full Reel (Order in multiples of 3000)
Rp74.668 Rp224.004.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge
SMD/SMT
QFN-31
4 Output
17 A
4.75 V
9.5 V
Non-Inverting
- 40 C
+ 125 C
MASTERGAN
Reel
Cut Tape
Brand: STMicroelectronics
Maximum Turn-Off Delay Time: 45 ns
Maximum Turn-On Delay Time: 45 ns
Moisture Sensitive: Yes
Operating Supply Current: 10 A
Pd - Power Dissipation: 40 mW
Product Type: Gate Drivers
Propagation Delay - Max: 70 ns
Rds On - Drain-Source Resistance: 330 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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