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MJD41CQ-13

Name: Diodes Incorporated MJD41CQ-13
Brand: Diodes Incorporated
SKU: 621-MJD41CQ-13
Price: 17612 IDR
Availability: OutOfStock

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See Product Specifications

Mouser No:

621-MJD41CQ-13

Mfr. No:

MJD41CQ-13

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K

Datasheet:

MJD41CQ-13 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 2.395

Expected 29/04/2026
Factory Lead Time:: 40

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp17.612	Rp17.612
	Rp10.971	Rp109.710
	Rp7.155	Rp715.500
	Rp5.504	Rp2.752.000
	Rp4.972	Rp4.972.000
Full Reel (Order in multiples of 2500)
	Rp4.421	Rp11.052.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	100 V
Collector- Base Voltage VCBO:	120 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	1.5 V
Pd - Power Dissipation:	2.7 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	6 A
DC Collector/Base Gain hFE Min:	15
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2500
Subcategory:	Transistors

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Datasheet

MJD41CQ-13 Datasheet (PDF)

PCN

Product Change Notification 2025-10-15 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MJD Automotive Medium Power Transistors

Diodes Inc. MJD Automotive Medium Power Transistors are bipolar transistors that are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. Each device has a collector-emitter breakdown voltage of 50V or 100V (minimum). The Diodes Inc. MJD Automotive Medium Power Transistors come in a TO-252 (DPAK) package and are ideal for power switching or amplification applications.