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MR0A08BCYS35

Name: Everspin Technologies MR0A08BCYS35
Brand: Everspin Technologies
SKU: 936-MR0A08BCYS35
Price: 415904 IDR
Availability: InStock

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Mouser No:

936-MR0A08BCYS35

Mfr. No:

MR0A08BCYS35

Mfr.:

Everspin Technologies

Description:

MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM

Datasheet:

MR0A08BCYS35 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Everspin Technologies MR0A08BCYS35

In Stock: 410

Stock:: 410 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp415.904	Rp415.904
	Rp385.266	Rp3.852.660
	Rp373.158	Rp9.328.950
	Rp363.985	Rp18.199.250
	Rp351.142	Rp35.114.200
	Rp341.969	Rp92.331.630
	Rp326.742	Rp176.440.680
1.080	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	TSOP-II-44
Interface Type:	Parallel
Memory Size:	1 Mbit
Organisation:	128 k x 8
Data Bus Width:	8 bit
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	25 mA, 55 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	MR0A08B
Packaging:	Tray
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x8)
Unit Weight:	5,066 g

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Datasheet

MR0A08BCYS35 Datasheet (PDF)

PCN

Alternative Format for Trace Codes (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.