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MR25H128ACDFR

Name: Everspin Technologies MR25H128ACDFR
Brand: Everspin Technologies
SKU: 936-MR25H128ACDFR
Price: 87144 IDR
Availability: OutOfStock

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Mouser No:

936-MR25H128ACDFR

Mfr. No:

MR25H128ACDFR

Mfr.:

Everspin Technologies

Description:

MRAM 128Kb 3.3V 16Kx8 SPI

Datasheet:

MR25H128ACDFR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Everspin Technologies MR25H128ACDFR

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 4000 Multiples: 4000

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 4000)
	Rp87.144	Rp348.576.000

Alternative Packaging

Mfr. Part No.:

MR25H128ACDF

Packaging:

Tray

Availability:

In Stock

Price:

Rp102.738

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	DFN-8
Interface Type:	SPI
Memory Size:	128 kbit
Organisation:	16 k x 8
Data Bus Width:	8 bit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	6 mA, 23 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	MR25H128A
Packaging:	Reel
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	4000
Subcategory:	Memory & Data Storage
Tradename:	Serial I/O (SPI)

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Datasheet

MR25H128ACDFR Datasheet (PDF)

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CNHTS:: 8542320000
CAHTS:: 8542320090
USHTS:: 8542320071
MXHTS:: 8542320201
ECCN:: EAR99

MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.