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MR25H128AMDF

Name: Everspin Technologies MR25H128AMDF
Brand: Everspin Technologies
SKU: 936-MR25H128AMDF
Price: 263632 IDR
Availability: InStock

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Mouser No:

936-MR25H128AMDF

Mfr. No:

MR25H128AMDF

Mfr.:

Everspin Technologies

Description:

MRAM 128Kb 3.3V 16Kx8 SPI

Datasheet:

MR25H128AMDF Datasheet (PDF)

ECAD Model:

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Learn more about Everspin Technologies MR25H128AMDF

In Stock: 216

Stock:: 216 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp263.632	Rp263.632
	Rp244.919	Rp2.449.190
	Rp237.397	Rp5.934.925
	Rp236.113	Rp11.805.650
	Rp200.522	Rp114.297.540

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	DFN-8
Interface Type:	SPI
Memory Size:	128 kbit
Organisation:	16 k x 8
Data Bus Width:	8 bit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	6 mA, 23 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MR25H128A
Packaging:	Tray
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	570
Subcategory:	Memory & Data Storage
Tradename:	Serial I/O (SPI)
Unit Weight:	5,163 g

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Datasheet

MR25H128AMDF Datasheet (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
MXHTS:: 8542320299
ECCN:: EAR99

MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.