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MR4A16BMA35

Name: Everspin Technologies MR4A16BMA35
Brand: Everspin Technologies
SKU: 936-MR4A16BMA35
Price: 872169 IDR
Availability: InStock

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Mouser No:

936-MR4A16BMA35

Mfr. No:

MR4A16BMA35

Mfr.:

Everspin Technologies

Description:

MRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM

Datasheet:

MR4A16BMA35 Datasheet (PDF)

ECAD Model:

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Learn more about Everspin Technologies MR4A16BMA35

In Stock: 616

Stock:: 616 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp872.169	Rp872.169
	Rp805.206	Rp8.052.060
	Rp779.155	Rp19.478.875
	Rp759.891	Rp37.994.550
	Rp718.429	Rp71.842.900
	Rp650.366	Rp156.087.840

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	BGA-48
Interface Type:	Parallel
Memory Size:	16 Mbit
Organisation:	1 M x 16
Data Bus Width:	16 bit
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	60 mA, 152 mA
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C
Series:	MR4A16B
Packaging:	Tray
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	240
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x16)
Unit Weight:	7,808 g

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Datasheet

MR4A16BMA35 Datasheet (PDF)

PCN

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CNHTS:: 8542329090
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
TARIC:: 8542329000
MXHTS:: 8542320299
ECCN:: EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.