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MSCSM120DAM31CTBL1NG

Name: Microchip MSCSM120DAM31CTBL1NG
Brand: Microchip Technology
SKU: 579-M120DAM31CTBL1NG
Price: 1558493 IDR
Availability: InStock

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Mouser No:

579-M120DAM31CTBL1NG

Mfr. No:

MSCSM120DAM31CTBL1NG

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1

Datasheet:

MSCSM120DAM31CTBL1NG Datasheet (PDF)

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In Stock: 11

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp1.558.493	Rp1.558.493
	Rp1.558.309	Rp15.583.090
250	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
Product:	MOSFET-SiC SBD Modules
Type:	MOSFET / SiC SBD
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Brand:	Microchip Technology
Configuration:	Boost Chopper
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	25 ns
Id - Continuous Drain Current:	79 A
Pd - Power Dissipation:	310 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	31 mOhms
Rise Time:	30 ns
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV

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MSCSM120DAM31CTBL1NG Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

MSCSM120x MOSFET Power Modules

Microchip Technology MSCSM120x MOSFET Power Modules are high-efficiency converters that feature Si₃N₄ substrate with thick copper for improved thermal performance. These modules offer a low profile, direct mounting to the heatsink (isolated package), an internal thermistor for temperature monitoring, and an extended temperature range. The MSCSM120x modules operate at 1.2kV reverse voltage (V_R), -10V to 25V gate-source voltage range (V_GS), 310W/560W power dissipation (P_D), and 79A/150A continuous drain current (I_D). These modules are used in applications such as high-reliability power systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches.