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NTMFS0D9N04XLT1G

Name: onsemi NTMFS0D9N04XLT1G
Brand: onsemi
SKU: 863-NTMFS0D9N04XLT1G
Price: 57606 IDR
Availability: InStock

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Mouser No:

863-NTMFS0D9N04XLT1G

Mfr. No:

NTMFS0D9N04XLT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10S IN S08FL PACKAGE

Datasheet:

NTMFS0D9N04XLT1G Datasheet

ECAD Model:

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In Stock: 1.485

Stock:: 1.485

Can Dispatch Immediately

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On Order:: 1.500

Expected 17/02/2027
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp57.606	Rp57.606
	Rp38.160	Rp381.600
	Rp26.602	Rp2.660.200
	Rp22.566	Rp11.283.000
Full Reel (Order in multiples of 1500)
	Rp18.896	Rp28.344.000
	Rp18.346	Rp55.038.000
24.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	278 A
Rds On - Drain-Source Resistance:	900 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	178 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	NTMFS0D9N04XL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	53 ns
Typical Turn-On Delay Time:	21 ns

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Datasheet

NTMFS0D9N04XLT1G Datasheet

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.