NTMFS1D3N04XMT1G

onsemi
863-NTMFS1D3N04XMT1G
NTMFS1D3N04XMT1G

Mfr.:

Description:
MOSFETs 40V T10M IN S08FL PACKAGE

ECAD Model:
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In Stock: 6.718

Stock:
6.718 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp35.408 Rp35.408
Rp25.684 Rp256.840
Rp17.575 Rp1.757.500
Rp14.365 Rp7.182.500
Full Reel (Order in multiples of 1500)
Rp13.429 Rp20.143.500

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DFN-5
N-Channel
1 Channel
40 V
195 A
1.3 mOhms
- 20 V, 20 V
3.5 V
38.5 nC
- 55 C
+ 175 C
90 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 5.47 ns
Forward Transconductance - Min: 105 S
Product Type: MOSFETs
Rise Time: 6.27 nC
Series: NTMFS1D3N04XM
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 29.2 ns
Typical Turn-On Delay Time: 20 ns
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.