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NTMT061N60S5H

Name: onsemi NTMT061N60S5H
Brand: onsemi
SKU: 863-NTMT061N60S5H
Price: 119799 IDR
Availability: OutOfStock

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See Product Specifications

Mouser No:

863-NTMT061N60S5H

Mfr. No:

NTMT061N60S5H

Mfr.:

onsemi

Description:

MOSFETs SF5 600V FAST 61MOHM FOR

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTMT061N60S5H Datasheet

ECAD Model:

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Availability

Stock:: 0

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On Order:: 3.000

Expected 12/06/2026
Factory Lead Time:: 21

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp119.799	Rp119.799
	Rp85.309	Rp853.090
	Rp74.118	Rp7.411.800
	Rp72.283	Rp36.141.500
Full Reel (Order in multiples of 3000)
	Rp72.283	Rp216.849.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDFN-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	41 A
Rds On - Drain-Source Resistance:	61 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	73.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	2.62 ns
Product Type:	MOSFETs
Rise Time:	8.64 ns
Series:	NTMT061N60S5H
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	76.1 ns
Typical Turn-On Delay Time:	21.6 ns

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Datasheet

NTMT061N60S5H Datasheet

Material Composition Disclosure

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

SuperFET® V MOSFETs

onsemi SuperFET^® V MOSFETs are the fifth generation high-voltage Super Junction (SJ) MOSFETs. These devices deliver best-in-class Figure of Merits (FoMs) (R_DS(ON)·Q_G and R_DS(ON)·E_OSS) to improve not only heavy load but also light load efficiency. The 600V SuperFET V MOSFETs provide design benefits through reduced conduction and switching losses while supporting extreme MOSFET dV_DS/dt ratings at 120V/ns. The SuperFET V MOSFET FAST series help to maximize system efficiency and power density. The SuperFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. Typical applications include telecommunication, cloud system, and industrial.