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NTMYS011N04CTWG

Name: onsemi NTMYS011N04CTWG
Brand: onsemi
SKU: 863-NTMYS011N04CTWG
Price: 50452 IDR
Availability: InStock

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Mouser No:

863-NTMYS011N04CTWG

Mfr. No:

NTMYS011N04CTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 12 mOhm 35A Single N-Channel

Datasheet:

NTMYS011N04CTWG Datasheet

ECAD Model:

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In Stock: 1.109

Stock:: 1.109 Can Dispatch Immediately

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Factory Lead Time:: 37 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp50.452	Rp50.452
	Rp33.023	Rp330.230
	Rp22.749	Rp2.274.900
	Rp18.529	Rp9.264.500
Full Reel (Order in multiples of 3000)
	Rp9.650	Rp28.950.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	7.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	28 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	111 S
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	NTMYS011N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	75 mg

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Datasheet

NTMYS011N04CTWG Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Industrial N-Channel Power MOSFETs

onsemi LFPAK4 Industrial N-channel Power MOSFETs are single MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These industrial-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide, -55°C to +175°C operating temperature range.