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NTTFSSH1D3N04XL

Name: onsemi NTTFSSH1D3N04XL
Brand: onsemi
SKU: 863-NTTFSSH1D3N04XL
Price: 51002 IDR
Availability: InStock

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Mouser No:

863-NTTFSSH1D3N04XL

Mfr. No:

NTTFSSH1D3N04XL

Mfr.:

onsemi

Description:

MOSFETs T10S 40V PC33 SOURCE DOWN GEN 2

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTTFSSH1D3N04XL Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTTFSSH1D3N04XL

In Stock: 2.368

Stock:: 2.368 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp51.002	Rp51.002
	Rp33.023	Rp330.230
	Rp23.666	Rp2.366.600
	Rp19.814	Rp9.907.000
	Rp18.236	Rp18.236.000
Full Reel (Order in multiples of 3000)
	Rp15.484	Rp46.452.000
	Rp15.466	Rp139.194.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WDFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	207 A
Rds On - Drain-Source Resistance:	1.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	107 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	123 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	NTTFSSH1D3N04XL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

NTTFSSH1D3N04XL Datasheet

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.