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NVMFWS1D3N04XMT1G

Name: onsemi NVMFWS1D3N04XMT1G
Brand: onsemi
SKU: 863-VMFWS1D3N04XMT1G
Price: 42379 IDR
Availability: InStock

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Mouser No:

863-VMFWS1D3N04XMT1G

Mfr. No:

NVMFWS1D3N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN S08FL PACKAGE

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMFWS1D3N04XMT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFWS1D3N04XMT1G

In Stock: 5.990

Stock:: 5.990 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp42.379	Rp42.379
	Rp27.152	Rp271.520
	Rp18.529	Rp1.852.900
	Rp15.337	Rp7.668.500
	Rp14.200	Rp14.200.000
Full Reel (Order in multiples of 1500)
	Rp12.475	Rp18.712.500

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	195 A
Rds On - Drain-Source Resistance:	1.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	38.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	90 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	5.2 ns
Forward Transconductance - Min:	105 S
Product Type:	MOSFETs
Rise Time:	6.2 ns
Series:	NVMFWS1D3N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30.4 ns
Typical Turn-On Delay Time:	19.1 ns

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Datasheet

NVMFWS1D3N04XMT1G Datasheet

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.