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PMV33UPE,215

Name: Nexperia PMV33UPE,215
Brand: Nexperia
SKU: 771-PMV33UPE215
Price: 15411 IDR
Availability: InStock

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See Product Specifications

Mouser No:

771-PMV33UPE215

Mfr. No:

PMV33UPE,215

Mfr.:

Nexperia

Description:

MOSFETs PMV33UPE/SOT23/TO-236AB

Datasheet:

PMV33UPE,215 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMV33UPE,215

In Stock: 1.931

Stock:: 1.931

Can Dispatch Immediately

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On Order:: 3.000

Expected 08/02/2027

9.000

Expected 22/02/2027
Factory Lead Time:: 67

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp15.411	Rp15.411
	Rp9.540	Rp95.400
	Rp7.412	Rp370.600
	Rp6.183	Rp618.300
	Rp4.733	Rp2.366.500
	Rp4.256	Rp4.256.000
Full Reel (Order in multiples of 3000)
	Rp3.651	Rp10.953.000
	Rp3.357	Rp20.142.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	5.3 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	14.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	980 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	934066842215
Unit Weight:	8 mg

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Attributes selected: 0

Filter Document:

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

PMVxx P-Channel Trench MOSFETs

Nexperia P-Channel Trench MOSFETS are enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. They employ Trench MOSFET technology and offer a low threshold voltage and very fast switching. These MOSFETs are ideal for such applications as relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits.

SOT23 Surface-Mounted Package Products

Nexperia SOT23 Surface-Mounted Package Products are contained in a plastic, surface-mounted, three terminals, 1.9mm pitch, 2.9mm x 1.3mm x 1mm package. This mainstay package in semiconductors was introduced in 1969 and quickly became an industry standard. The SOT23 encapsulates an extensive range of diodes, bipolar transistors, MOSFETs, and ESD protection devices within Nexperia's portfolio. The SOT23 package has been a constant for the last 50 years, leading to several offspring, such as the SOT223 and SOT323.