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R8002CND3FRATL

Name: ROHM Semiconductor R8002CND3FRATL
Brand: ROHM Semiconductor
SKU: 755-R8002CND3FRATL
Price: 56322 IDR
Availability: InStock

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Mouser No:

755-R8002CND3FRATL

Mfr. No:

R8002CND3FRATL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 800V 2A N-CH

Datasheet:

R8002CND3FRATL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor R8002CND3FRATL

In Stock: 2.857

Stock:: 2.857 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2857 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp56.322	Rp56.322
	Rp37.976	Rp379.760
	Rp30.454	Rp3.045.400
	Rp26.418	Rp13.209.000
	Rp24.584	Rp24.584.000
Full Reel (Order in multiples of 2500)
	Rp23.299	Rp58.247.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	4.3 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	12.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	69 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	67 ns
Product Type:	MOSFETs
Rise Time:	22 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	19 ns
Part # Aliases:	R8002CND3FRA
Unit Weight:	330 mg

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Attributes selected: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

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Datasheet

R8002CND3FRATL Datasheet

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

R800xxND3FRA N-Channel Automotive Power MOSFETs

ROHM Semiconductor R800xxND3FRA N-Channel Automotive Power MOSFETs are low on-resistance MOSFETs with simple drive circuits. These MOSFETs feature fast switching speed, lead-free plating, and are AEC-Q101 qualified. The R800xxND3FRA MOSFETs are available in DPAK (TO-252) packages. ROHM Semiconductor R800xxND3FRA MOSFETs are suitable for switching power supplies.