It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RF4E110GNTR

Name: ROHM Semiconductor RF4E110GNTR
Brand: ROHM Semiconductor
SKU: 755-RF4E110GNTR
Price: 11375 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-RF4E110GNTR

Mfr. No:

RF4E110GNTR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs 4.5V Drive Nch MOSFET

Datasheet:

RF4E110GNTR Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RF4E110GNTR

In Stock: 5.002

Stock:: 5.002 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp11.375	Rp11.375
	Rp7.100	Rp71.000
	Rp5.155	Rp515.500
	Rp4.293	Rp2.146.500
	Rp3.853	Rp3.853.000
Full Reel (Order in multiples of 3000)
	Rp3.467	Rp10.401.000
	Rp3.266	Rp19.596.000
	Rp2.844	Rp25.596.000
	Rp2.770	Rp66.480.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	11.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	7.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	3 ns
Forward Transconductance - Min:	6 S
Product Type:	MOSFETs
Rise Time:	5.5 ns
Series:	RF4E110GN
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	RF4E110GN

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RF4E110GNTR Datasheet

Models

ThermalLink

Other

Specification Sheets

SPICE Models

SpiceLink

Technical Resources

Test/Quality Data

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Medium Power MOSFETs

ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. These MOSFETs feature a broad lineup with compact, high-power, and complex types to meet various needs. ROHM Medium Power MOSFETs come in high-power small mold packages, and typical applications are for DC/DC converters and load switches.