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RGS50TSX2GC11

Name: ROHM Semiconductor RGS50TSX2GC11
Brand: ROHM Semiconductor
SKU: 755-RGS50TSX2GC11
Price: 143649 IDR
Availability: InStock

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Mouser No:

755-RGS50TSX2GC11

Mfr. No:

RGS50TSX2GC11

Mfr.:

ROHM Semiconductor

Description:

IGBTs 10 s Short-Circuit Tolerance, 1200V 25A, Field Stop Trench IGBT

Datasheet:

RGS50TSX2GC11 Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 721

Stock:: 721 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp143.649	Rp143.649
	Rp97.601	Rp976.010
	Rp82.557	Rp8.255.700
	Rp77.053	Rp34.673.850
	Rp74.118	Rp66.706.200
25.200	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247N-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	30 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	395 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Gate-Emitter Leakage Current:	500 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	RGS50TSX2

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Datasheet

RGS50TSX2GC11 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

Specification Sheets

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CNHTS:: 8541210000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (V_CE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.