It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RQ3G120BJFRATCB

Name: ROHM Semiconductor RQ3G120BJFRATCB
Brand: ROHM Semiconductor
SKU: 755-RQ3G120BJFRATCB
Price: 28803 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-RQ3G120BJFRATCB

Mfr. No:

RQ3G120BJFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Pch -40V -12A, HSMT8AG, Power MOSFET for Automotive

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RQ3G120BJFRATCB Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RQ3G120BJFRATCB

In Stock: 2.992

Stock:: 2.992 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp28.803	Rp28.803
	Rp18.236	Rp182.360
	Rp12.163	Rp1.216.300
	Rp9.962	Rp4.981.000
	Rp9.797	Rp9.797.000
Full Reel (Order in multiples of 3000)
	Rp8.311	Rp24.933.000
	Rp8.256	Rp49.536.000
	Rp7.944	Rp71.496.000
	Rp7.889	Rp189.336.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSMT-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	48 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	15.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	9.8 ns
Forward Transconductance - Min:	6.5 S
Product Type:	MOSFETs
Rise Time:	4.7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	6.7 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RQ3G120BJFRATCB Datasheet

Specification Sheets

Datasheet - Chinese (English language)

This functionality requires JavaScript to be enabled.

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RQ3xFRATCB Power MOSFETs

ROHM Semiconductor RQ3xFRATCB Power MOSFETs are AEC-Q101-qualified, automotive-grade MOSFETs. These MOSFETs feature -40V to 100V drain-source voltage range, 8 terminals, up to 69W power dissipation, and ±12A to ±27A continuous drain current. The RQ3xFRATCB power MOSFETs are available in N-channel and P-channel. These power MOSFETs come in a small 3.3mm x 3.3mm HSMT8AG package. The RQ3xFRATCB power MOSFETs are ideal for Advanced Driver Assistance Systems (ADAS), infotainment, lighting, and body.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.