It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RS3G160ATTB1

Name: ROHM Semiconductor RS3G160ATTB1
Brand: ROHM Semiconductor
SKU: 755-RS3G160ATTB1
Price: 57973 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-RS3G160ATTB1

Mfr. No:

RS3G160ATTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -16.0A(Id), (4.5V, 6.0V Drive)

Datasheet:

RS3G160ATTB1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RS3G160ATTB1

In Stock: 9.839

Stock:: 9.839 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp57.973	Rp57.973
	Rp37.793	Rp377.930
	Rp26.602	Rp2.660.200
	Rp22.566	Rp11.283.000
	Rp21.098	Rp21.098.000
Full Reel (Order in multiples of 2500)
	Rp19.630	Rp49.075.000
	Rp18.346	Rp183.460.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	16 A
Rds On - Drain-Source Resistance:	6.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	120 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	210 ns
Product Type:	MOSFETs
Rise Time:	65 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P - Channel
Typical Turn-Off Delay Time:	260 ns
Typical Turn-On Delay Time:	24 ns
Part # Aliases:	RS3G160AT
Unit Weight:	83 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RS3G160ATTB1 Datasheet

Application Notes

Application Note (PDF)

Specification Sheets

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RS3 Pch Power MOSFETs

ROHM Semiconductor RS3 Pch Power MOSFETs feature low on-resistance and are housed in a small surface-mount package. ROHM offers a wide voltage lineup from small signal products to 800V high voltage products. They can be used for various applications like power supplies and motor drive circuits.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.