+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SCS206AGC17

Images are for reference only
See Product Specifications

Mouser No:

755-SCS206AGC17

Mfr. No:

SCS206AGC17

Mfr.:

ROHM Semiconductor

Description:

SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

SCS206AGC17 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor SCS206AGC17

Availability

Stock:: Not Available

An unexpected error occurred. Please try again later.

Pricing (IDR)

Request a Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220ACG-2
Configuration:	Single
If - Forward Current:	6 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.55 V
Ifsm - Forward Surge Current:	23 A
Ir - Reverse Current:	120 uA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	51 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Part # Aliases:	SCS206AG

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCS206AGC17 Datasheet (PDF)

Specification Sheets

This functionality requires JavaScript to be enabled.

USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.