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SCT012W90G3-4AG

Name: STMicroelectronics SCT012W90G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT012W90G3-4AG
Price: 380680 IDR
Availability: InStock

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Mouser No:

511-SCT012W90G3-4AG

Mfr. No:

SCT012W90G3-4AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

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New Product:

New from this manufacturer.

Datasheet:

SCT012W90G3-4AG Datasheet (PDF)

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In Stock: 640

Stock:: 640 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp380.680	Rp380.680
	Rp324.541	Rp3.245.410
	Rp280.694	Rp28.069.400

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	110 A
Rds On - Drain-Source Resistance:	15.8 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3.1 V
Qg - Gate Charge:	138 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	625 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	16 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	43 ns
Factory Pack Quantity:	1
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	41 ns
Typical Turn-On Delay Time:	20 ns

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Datasheet

SCT012W90G3-4AG Datasheet (PDF)

PCN

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.