It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SCT4026DW7TL

Name: ROHM Semiconductor SCT4026DW7TL
Brand: ROHM Semiconductor
SKU: 755-SCT4026DW7TL
Price: 311148 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-SCT4026DW7TL

Mfr. No:

SCT4026DW7TL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO263 750V 51A N-CH SIC

Datasheet:

SCT4026DW7TL Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor SCT4026DW7TL

In Stock: 2.008

Stock:: 2.008 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2008 will be subject to minimum order requirements.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp311.148	Rp311.148
	Rp249.139	Rp2.491.390
	Rp204.191	Rp20.419.100
Full Reel (Order in multiples of 1000)
	Rp191.349	Rp191.349.000
2.000	Quote

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	26 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	94 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	16 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	9.5 ns
Part # Aliases:	SCT4026DW7

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCT4026DW7TL Datasheet

Specification Sheets

This functionality requires JavaScript to be enabled.

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SCT4026DW7 N-Ch SiC power MOSFET

ROHM Semiconductor SCT4026DW7 N-Ch SiC power MOSFET is a 750V, 26mΩ MOSFET in a TO-263-7L package. The SCT4026DW7 is simple to drive and easy to parallel with fast reverse recovery. The SCT4026DW7 is ideal for solar inverters, induction heating, and motor drives.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.