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SI7898DP-T1-E3

Name: Vishay SI7898DP-T1-E3
Brand: Vishay Semiconductors
SKU: 781-SI7898DP-T1-E3
Price: 39077 IDR
Availability: InStock

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See Product Specifications

Mouser No:

781-SI7898DP-T1-E3

Mfr. No:

SI7898DP-T1-E3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 150V Vds 20V Vgs PowerPAK SO-8

Datasheet:

SI7898DP-T1-E3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI7898DP-T1-E3

In Stock: 27.315

Stock:: 27.315 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp39.077	Rp39.077
	Rp24.767	Rp247.670
	Rp18.713	Rp1.871.300
	Rp16.310	Rp8.155.000
	Rp15.466	Rp15.466.000
Full Reel (Order in multiples of 3000)
	Rp13.649	Rp40.947.000
	Rp13.521	Rp81.126.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.9 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	SI7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	SI7898DP-T1
Unit Weight:	506,600 mg

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Datasheet

SI7898DP-T1-E3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

SI78 N-Channel (D-S) MOSFETs

Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK^® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% R_g tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.