SI8817DB-T2-E1

Vishay Semiconductors
78-SI8817DB-T2-E1
SI8817DB-T2-E1

Mfr.:

Description:
MOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:
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Learn more about Vishay Semiconductors SI8817DB-T2-E1

In Stock: 41.468

Stock:
41.468 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp13.393 Rp13.393
Rp8.091 Rp80.910
Rp5.320 Rp532.000
Rp4.054 Rp2.027.000
Rp3.577 Rp3.577.000
Full Reel (Order in multiples of 3000)
Rp2.862 Rp8.586.000
Rp2.789 Rp16.734.000
Rp2.458 Rp22.122.000
Rp2.440 Rp58.560.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
MicroFoot-4
P-Channel
1 Channel
20 V
2.9 A
61 mOhms
- 8 V, 8 V
1 V
19 nC
- 55 C
+ 150 C
900 mW
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 22 ns
Forward Transconductance - Min: 5 S
Product Type: MOSFETs
Rise Time: 20 ns
Series: SI8
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 52 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 45,104 mg
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Attributes selected: 0

CNHTS:
8541210000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

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