It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SISS52DN-T1-GE3

Name: Vishay SISS52DN-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SISS52DN-T1-GE3
Price: 28803 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SISS52DN-T1-GE3

Mfr. No:

SISS52DN-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAK1212 N-CH 30V 47.1A

Datasheet:

SISS52DN-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay / Siliconix SISS52DN-T1-GE3

In Stock: 4.096

Stock:: 4.096 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp28.803	Rp28.803
	Rp18.199	Rp181.990
	Rp12.310	Rp1.231.000
	Rp9.705	Rp4.852.500
	Rp8.824	Rp8.824.000
Full Reel (Order in multiples of 3000)
	Rp7.760	Rp23.280.000
	Rp7.210	Rp43.260.000
	Rp7.008	Rp63.072.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK1212-8S
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	162 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	57 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	6 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N - Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	12 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SISS52DN-T1-GE3 Datasheet

PCN

Product Change Notification (PDF)

Technical Resources

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low R_DS(on). These power MOSFETs offer 30V V_DS and very low R_DS x Q_g Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A I_D and 19.9nC Q_g. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A I_D and 21nC Q_g. This 100% R_g and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET^® Gen V Power MOSFETs increase power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK^® 1212-8SH or PowerPAK SO-8 single package.