It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SP8K31HZGTB

Name: ROHM Semiconductor SP8K31HZGTB
Brand: ROHM Semiconductor
SKU: 755-SP8K31HZGTB
Price: 37426 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-SP8K31HZGTB

Mfr. No:

SP8K31HZGTB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs AECQ

Datasheet:

SP8K31HZGTB Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor SP8K31HZGTB

In Stock: 2.421

Stock:: 2.421 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2421 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp37.426	Rp37.426
	Rp24.033	Rp240.330
	Rp16.126	Rp1.612.600
	Rp12.824	Rp6.412.000
	Rp11.888	Rp11.888.000
Full Reel (Order in multiples of 2500)
	Rp9.870	Rp24.675.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	120 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	5.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	7 ns
Forward Transconductance - Min:	2.5 S
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	SP8K31HZG

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

Filter Document:

Datasheet

SP8K31HZGTB Datasheet (PDF)

Specification Sheets

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SP8K Power MOSFETs

ROHM Semiconductor SP8K Power MOSFETs are low on-resistance devices housed in a small surface-mount package (SOP8). The SP8M features Pb-free plating and is RoHS compliant. The MOSFETs are also halogen-free, have Sn100% plating, and are AEC-Q101 qualified.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.