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SSM6J507NU,LF

Name: Toshiba SSM6J507NU,LF
Brand: Toshiba
SKU: 757-SSM6J507NULF
Price: 13393 IDR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6J507NULF

Mfr. No:

SSM6J507NU,LF

Mfr.:

Toshiba

Description:

MOSFETs Small Signal MOSFET V=30V, I-10A

Datasheet:

SSM6J507NU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6J507NU,LF

In Stock: 18.824

Stock:: 18.824 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp13.393	Rp13.393
	Rp8.274	Rp82.740
	Rp5.320	Rp532.000
	Rp4.054	Rp2.027.000
	Rp3.633	Rp3.633.000
Full Reel (Order in multiples of 3000)
	Rp3.027	Rp9.081.000
	Rp2.789	Rp16.734.000
	Rp2.422	Rp21.798.000
	Rp2.293	Rp55.032.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	13.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Series:	SSM6J507
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	55 ns
Unit Weight:	8,500 mg

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Datasheet

SSM6J507NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

USB Type-C™ Data Mux & Power Delivery Switches

Toshiba USB Type-C™ Data Mux and Power Delivery Switches support new features and new technology in mobile applications. Devices are charged with USB Power Delivery systems with higher charging voltages than before. For example, a 100W charging system delivers 20V/5A and would require a 30V-tolerant switch. Toshiba provides low-resistance 30V switches, including MOSFETs and IC switches, that provide overvoltage protection and slew rate control.