It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SSM6N67NU,LF

Name: Toshiba SSM6N67NU,LF
Brand: Toshiba
SKU: 757-SSM6N67NULF
Price: 11191 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-SSM6N67NULF

Mfr. No:

SSM6N67NU,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=4A VDSS=30V

Datasheet:

SSM6N67NU,LF Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba SSM6N67NU,LF

In Stock: 30.311

Stock:: 30.311

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 45.000

Expected 06/03/2026

72.000

Expected 04/05/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp11.191	Rp11.191
	Rp6.953	Rp69.530
	Rp4.458	Rp445.800
	Rp3.376	Rp1.688.000
	Rp2.990	Rp2.990.000
Full Reel (Order in multiples of 3000)
	Rp2.440	Rp7.320.000
	Rp2.257	Rp13.542.000
	Rp1.945	Rp17.505.000
	Rp1.871	Rp44.904.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	39.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	3.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	U-MOSVII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Forward Transconductance - Min:	6 S
Product Type:	MOSFETs
Series:	SSM6N67NU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	8,500 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM6N67NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.