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STD80N340K6

Name: STMicroelectronics STD80N340K6
Brand: STMicroelectronics
SKU: 511-STD80N340K6
Price: 79071 IDR
Availability: InStock

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Mouser No:

511-STD80N340K6

Mfr. No:

STD80N340K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET

Complete Your Design

Datasheet:

STD80N340K6 Datasheet (PDF)

ECAD Model:

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In Stock: 2.560

Stock:: 2.560 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2560 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp79.071	Rp79.071
	Rp52.103	Rp521.030
	Rp36.875	Rp3.687.500
	Rp33.757	Rp16.878.500
	Rp33.573	Rp33.573.000
Full Reel (Order in multiples of 2500)
	Rp28.436	Rp71.090.000
	Rp27.336	Rp136.680.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	340 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	17.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	92 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Fall Time:	11 ns
Product Type:	MOSFETs
Rise Time:	4.9 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	330 mg

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Datasheet

STD80N340K6 Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N240K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET is based on the ultimate MDmesh K6 technology built on 20 years of STM experience on super junction technology. The high voltage N-channel power MOSFET offers an ultra-low gate charge and excellent R_DS(on) x area. The ST STP80N240K6 800V Power MOSFET features best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.