STGB15M65DF2

STMicroelectronics
511-STGB15M65DF2
STGB15M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package

ECAD Model:
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In Stock: 1.457

Stock:
1.457 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
Rp45.131 Rp45.131
Rp29.170 Rp291.700
Rp19.997 Rp1.999.700
Rp15.924 Rp7.962.000
Full Reel (Order in multiples of 1000)
Rp13.484 Rp13.484.000
Rp13.044 Rp26.088.000
Rp12.824 Rp64.120.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
D2PAK-3
SMD/SMT
Single
650 V
1.55 V
- 20 V, 20 V
30 A
136 W
- 55 C
+ 175 C
STGB15M65DF2
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 30 A
Gate-Emitter Leakage Current: +/- 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1,380 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.