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STGB30H60DFB

Name: STMicroelectronics STGB30H60DFB
Brand: STMicroelectronics
SKU: 511-STGB30H60DFB
Price: 60358 IDR
Availability: InStock

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Mouser No:

511-STGB30H60DFB

Mfr. No:

STGB30H60DFB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Complete Your Design

Datasheet:

STGB30H60DFB Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STGB30H60DFB

In Stock: 79

Stock:: 79

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On Order:: 1.000

Expected 04/05/2026
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp60.358	Rp60.358
	Rp39.077	Rp390.770
	Rp28.803	Rp2.880.300
	Rp24.400	Rp12.200.000
Full Reel (Order in multiples of 1000)
	Rp20.731	Rp20.731.000
	Rp19.630	Rp39.260.000

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	D2PAK-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	260 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGB30H60DFB
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Gate-Emitter Leakage Current:	+/- 250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1,380 g

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Datasheet

STGB30H60DFB Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.