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STGP30H60DFB

Name: STMicroelectronics STGP30H60DFB
Brand: STMicroelectronics
SKU: 511-STGP30H60DFB
Price: 52653 IDR
Availability: InStock

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Mouser No:

511-STGP30H60DFB

Mfr. No:

STGP30H60DFB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT

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Datasheet:

STGP30H60DFB Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGP30H60DFB

In Stock: 3.169

Stock:: 3.169 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp52.653	Rp52.653
	Rp26.051	Rp260.510
	Rp23.483	Rp2.348.300
	Rp19.080	Rp9.540.000
	Rp17.465	Rp17.465.000
	Rp16.603	Rp33.206.000
	Rp15.778	Rp78.890.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	260 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGP30H60DFB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Gate-Emitter Leakage Current:	+/- 250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2 g

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Datasheet

STGP30H60DFB Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.