STGP30M65DF2

STMicroelectronics
511-STGP30M65DF2
STGP30M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 30 A low loss

ECAD Model:
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In Stock: 980

Stock:
980 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp58.340 Rp58.340
Rp26.418 Rp264.180
Rp24.217 Rp2.421.700
Rp21.281 Rp10.640.500
Rp19.630 Rp19.630.000
Rp18.346 Rp36.692.000
Rp18.163 Rp90.815.000

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
60 A
258 W
- 55 C
+ 175 C
STGP30M65DF2
Tube
Brand: STMicroelectronics
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.