STGWA25M120DF3

STMicroelectronics
511-STGWA25M120DF3
STGWA25M120DF3

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
50 A
375 W
- 55 C
+ 175 C
M
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 25 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 38 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.593
Expected 04/09/2026
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:

Pricing (IDR)

Qty. Unit Price
Ext. Price
Rp101.820 Rp101.820
Rp57.240 Rp572.400
Rp47.516 Rp4.751.600
Rp40.912 Rp24.547.200

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