+65 6788-9233

Part of the TTI Family of Specialists Contact Mouser (Singapore) +65 6788-9233 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STGYA120M65DF2

Name: STMicroelectronics STGYA120M65DF2
Brand: STMicroelectronics
SKU: 511-STGYA120M65DF2
Price: 168967 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGYA120M65DF2

Mfr. No:

STGYA120M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss

Complete Your Design

Datasheet:

STGYA120M65DF2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGYA120M65DF2

In Stock: 380

Stock:: 380 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp168.967	Rp168.967
	Rp99.068	Rp990.680
	Rp84.942	Rp8.494.200
	Rp84.759	Rp50.855.400
25.200	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	Max247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	160 A
Pd - Power Dissipation:	625 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGYA120M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	160 A
Gate-Emitter Leakage Current:	+/- 250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	4,430 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGYA120M65DF2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.