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STHU65N050DM9AG

Name: STMicroelectronics STHU65N050DM9AG
Brand: STMicroelectronics
SKU: 511-STHU65N050DM9AG
Price: 174287 IDR
Availability: InStock

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Mouser No:

511-STHU65N050DM9AG

Mfr. No:

STHU65N050DM9AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STHU65N050DM9AG Datasheet (PDF)

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In Stock: 403

Stock:: 403 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp174.287	Rp174.287
	Rp129.523	Rp1.295.230
	Rp107.874	Rp10.787.400
Full Reel (Order in multiples of 600)
	Rp96.133	Rp57.679.800
	Rp85.676	Rp102.811.200

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HU3PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	100 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	245 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	MDmesh M9
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	29 ns
Unit Weight:	2,320 g

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Datasheet

STHU65N050DM9AG Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.