STL33N60M2

STMicroelectronics
511-STL33N60M2
STL33N60M2

Mfr.:

Description:
MOSFETs N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerFLAT-8x8-5
N-Channel
1 Channel
600 V
21.5 A
135 mOhms
- 25 V, 25 V
3 V
47 nC
- 55 C
+ 150 C
150 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Moisture Sensitive: Yes
Product Type: MOSFETs
Series: STL33N60M2
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 180 mg
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

In Stock: 1.567

Stock:
1.567 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
Rp-
Ext. Price:
Rp-
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (IDR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
Rp95.032 Rp95.032
Rp71.366 Rp713.660
Rp53.203 Rp5.320.300
Rp44.581 Rp22.290.500
Rp41.462 Rp41.462.000
Full Reel (Order in multiples of 3000)
Rp37.426 Rp112.278.000
† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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