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STP80N450K6

Name: STMicroelectronics STP80N450K6
Brand: STMicroelectronics
SKU: 511-STP80N450K6
Price: 81089 IDR
Availability: InStock

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Mouser No:

511-STP80N450K6

Mfr. No:

STP80N450K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET

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Datasheet:

STP80N450K6 Datasheet (PDF)

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In Stock: 229

Stock:: 229 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 229 will be subject to minimum order requirements.

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Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp81.089	Rp81.089
	Rp43.663	Rp436.630
	Rp39.444	Rp3.944.400
	Rp32.472	Rp16.236.000
	Rp29.904	Rp29.904.000
	Rp29.170	Rp72.925.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	450 mOhms
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	50
Subcategory:	Transistors
Unit Weight:	2 g

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Datasheet

STP80N450K6 Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N450K6 800V N-Channel Power MOSFET

STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. This technology is based on 20 years of STMicroelectronics experience in super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.