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TK125V65Z,LQ

Name: Toshiba TK125V65Z,LQ
Brand: Toshiba
SKU: 757-TK125V65ZLQ
Price: 123102 IDR
Availability: InStock

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Mouser No:

757-TK125V65ZLQ

Mfr. No:

TK125V65Z,LQ

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 125mOhms DTMOS-VI

Datasheet:

TK125V65Z,LQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK125V65Z,LQ

In Stock: 7.281

Stock:: 7.281 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 7281 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+Rp98.000)

Pricing (IDR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	Rp123.102	Rp123.102
	Rp83.107	Rp831.070
	Rp61.643	Rp6.164.300
	Rp61.459	Rp61.459.000
Full Reel (Order in multiples of 2500)
	Rp50.085	Rp125.212.500

† A MouseReel™ fee of Rp98.000 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	DTMOS VI
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	90 ns
Typical Turn-On Delay Time:	45 ns
Unit Weight:	161,193 mg

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Datasheet

TK125V65Z,LQ Datasheet (PDF)

Application Notes

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Test/Quality Data

Reliability Data

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.