It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TK155A65Z,S4X

Name: Toshiba TK155A65Z,S4X
Brand: Toshiba
SKU: 757-TK155A65ZS4X
Price: 85492 IDR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK155A65ZS4X

Mfr. No:

TK155A65Z,S4X

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 155mOhms DTMOS-VI

Datasheet:

TK155A65Z,S4X Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK155A65Z,S4X

In Stock: 76

Stock:: 76 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

Rp-

Ext. Price:

Rp-

Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp85.492	Rp85.492
	Rp44.764	Rp447.640
	Rp39.811	Rp3.981.100
	Rp33.573	Rp16.786.500
	Rp32.106	Rp32.106.000

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	155 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	23 ns
Series:	DTMOS VI
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	44 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK155A65Z,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.