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TK1R4S04PB,LXHQ

Name: Toshiba TK1R4S04PB,LXHQ
Brand: Toshiba
SKU: 757-TK1R4S04PB,LXHQ
Price: 49351 IDR
Availability: InStock

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Mouser No:

757-TK1R4S04PB,LXHQ

Mfr. No:

TK1R4S04PB,LXHQ

Mfr.:

Toshiba

Description:

MOSFETs 180W 1MHz Automotive; AEC-Q101

Datasheet:

TK1R4S04PB,LXHQ Datasheet (PDF)

ECAD Model:

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In Stock: 26.111

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp49.351	Rp49.351
	Rp31.922	Rp319.220
	Rp22.015	Rp2.201.500
	Rp17.686	Rp8.843.000
	Rp16.511	Rp16.511.000
Full Reel (Order in multiples of 2000)
	Rp16.511	Rp33.022.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	1.35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	103 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	180 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	23 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	U-MOSIX-H
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	47 ns
Part # Aliases:	TK1R4S04PB,LXHQ(O
Unit Weight:	360 mg

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Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

TK1R4S04PB,LXHQ Datasheet (PDF)

Application Notes

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).

Automotive AEC-Q101 Qualified Power MOSFETs

Toshiba Automotive AEC-Q101 Qualified Power MOSFETs is an extensive lineup of Power MOSFETs covering various automotive applications in 12V to 48V battery systems. Toshiba has been in the discrete automotive industry since the 1960s, starting with rectifiers and then Automotive MOSFETs in the 1990s. With performance and reliability, all of Toshiba’s automotive products go above and beyond AEC-Q101 standards.

U-MOSIX-H Low Voltage Enhancement Mode MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
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