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TPH1R104PB,L1XHQ

Name: Toshiba TPH1R104PB,L1XHQ
Brand: Toshiba
SKU: 757-TPH1R104PB,L1XHQ
Price: 41829 IDR
Availability: InStock

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Mouser No:

757-TPH1R104PB,L1XHQ

Mfr. No:

TPH1R104PB,L1XHQ

Mfr.:

Toshiba

Description:

MOSFETs 132W 1MHz Automotive; AEC-Q101

Datasheet:

TPH1R104PB,L1XHQ Datasheet (PDF)

ECAD Model:

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In Stock: 4.627

Stock:: 4.627 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (IDR)

Qty.	Unit Price	Ext. Price
	Rp41.829	Rp41.829
	Rp26.785	Rp267.850
	Rp18.163	Rp1.816.300
	Rp15.135	Rp7.567.500
	Rp13.338	Rp13.338.000
	Rp13.117	Rp32.792.500
Full Reel (Order in multiples of 5000)
	Rp13.117	Rp65.585.000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-Advance-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	1.14 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	55 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	23 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	U-MOSIX-H
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	71 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	TPH1R104PB,L1XHQ(O
Unit Weight:	360 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

TPH1R104PB,L1XHQ Datasheet (PDF)

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Test/Quality Data

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).

Automotive AEC-Q101 Qualified Power MOSFETs

Toshiba Automotive AEC-Q101 Qualified Power MOSFETs is an extensive lineup of Power MOSFETs covering various automotive applications in 12V to 48V battery systems. Toshiba has been in the discrete automotive industry since the 1960s, starting with rectifiers and then Automotive MOSFETs in the 1990s. With performance and reliability, all of Toshiba’s automotive products go above and beyond AEC-Q101 standards.

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

U-MOSIX-H Low Voltage Enhancement Mode MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
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